IBM 223-6783-1 Customer Engineering - Transistor Theory &

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Extra resources for IBM 223-6783-1 Customer Engineering - Transistor Theory & Application (manual of instruction)

Example text

We could ask – why would magnetic domains be spontaneously magnetized? The formation of magnetic domains is due to minimization of the total energy, as will be discussed in the next chapter. This implies that, under every condition of the ferromagnet, the domain structure will strive to remain stable, and will, therefore, change until it finds this stability point if onditions change. We know from quantum mechanics [5, 6] that the spontaneous domain magnetization is a result of unpaired electron spins from partially filled electronic shells.

2 Classification of Magnetic Materials 9 sputtering process [4]. Ge is thermodynamically stable in a magnetite matrix, and it was confirmed that by adding 5 at% Ge, a thin magnetite film is still obtained. Furthermore, these magnetite thin films are ferrimagnetic, even though Ge has been added. Nevertheless, higher concentrations ( 14%) of Ge result in the magnetite films becoming paramagnetic. The advantage of adding Ge seems to be that it ensures formation of only the magnetite phase, whereas sputtering the magnetite target without Ge results in two phases, magnetite and hematite.

4 Elongation of a ferromagnetic object in the direction of an applied magnetic field longitudinal magnetostriction H 20 1 Traditional Magnetism Fig. 5 Hysteresis loop that includes the initial magnetization curve. Also shown are coercivity Hc and remanent magnetic flux density Br . A hysteresis loop can be obtained by plotting magnetic field density B vs. applied magnetic field intensity H , or as shown in the inset, by plotting magnetization M vs. applied magnetic field intensity H and equal to s D 100 D 111 D 7 10 6 is assumed, although it was not found to be representative of experimental results [19].

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